Semiconductor processing exhaust abatement
US6358485B1 · kind B1 · utility
5Cited by
4References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jun 16, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01D53/8668
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A process for the abatement of trimethylvinylsilane (TMVS) by contacting a gas stream containing TMVS with copper(II) oxide (CuO) and/or manganese oxide (MnO2) in the presence of sufficient oxygen to prevent reduction of the oxides and at a temperature of at least room temperature, but preferably, at an elevated temperature greater than 100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.