Method of manufacturing semiconductor device
US6358767B2 · kind B2 · utility
16Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 6, 2001 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jun 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/361
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In the steps of manufacturing a liquid crystal display, a step of reducing the electrostatic destruction of switching elements is provided. An electrostatic destruction preventing short-circuiting ring is left on an active matrix substrate until the execution of a short-circuiting bar-carrying FPC fixing step is finished. This enables the electrostatic destruction of the switching elements, which occurs due to the operations in a chamfering step to a FPC fixing step, to be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.