MOCVD precursors based on organometalloid ligands
US6359159B1 · kind B1 · utility
37Cited by
2References
22Claims
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Key dates
| Filing date | Dec 4, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Dec 4, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/92
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.