Solar cell having an integral monolithically grown bypass diode
US6359210B2 · kind B2 · utility
52Cited by
49References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2001 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jan 2, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/293
Abstract
The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.