Semiconductor device, active matrix substrate, method of manufacturing the semiconductor device and method of manufacturing the active matrix substrate
US6362027B1 · kind B1 · utility
38Cited by
3References
53Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1999 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Jul 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0225
Abstract
In a method of manufacturing a semiconductor device, a Ta film and an Al film are formed on a gate insulating film 103. The Al film is patterned to form an Al layer 106 for each of gate wirings. With this structure, all the Al layers 106 are electrically short-circuited by the Ta film. A probe of an anodic oxidation device is brought into contact with the Ta film to anodically oxidize the Al layers 106 and the Ta film to form a barrier A.O. film 107 and a TaOx film 109. The Ta film which has not been anodically oxidized functions as a Ta layer 108 of the gate wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.