Method for manufacturing fringe field switching mode liquid crystal display
US6362032B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Apr 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention provides a method for manufacturing a fringe field switching mode liquid crystal display. The method includes the steps of: depositing a transparent metal layer on a transparent insulating layer and forming a counter electrode by etching the transparent metal layer according to a first mask process; depositing an insulating layer on the counter electrode and the substrate; depositing a first opaque metal layer on the insulating layer and forming a gate line, a common electrode line and a pad by etching the first opaque metal layer according to a second mask process; depositing a gate insulating layer, an a-Si layer and an n+ a-Si layer in turn on a resultant and defining an active region of thin film transistor by etching the n+ a-Si layer and the a-Si layer according to a third mask process; depositing a transparent metal layer on the resultant and forming a pixel electrode of a comb shape by etching the transparent metal layer according to a fourth mask process; etching the gate insulating layer according to a fifth mask process so that the pad is exposed; forming a source electrode, a drain electrode and data line including a data pad by etching the second opaque …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.