Wafer processing with water vapor pumping
US6362096B1 · kind B1 · utility
0Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Jul 6, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/24
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for selectively depositing hemispherical grained silicon on the surface of a wafer in a process chamber. The chamber is evacuated so that a partial pressure of water vapor in the chamber is less than 10−7 torr, preferably using a turbomolecular pump and a water vapor pump in cooperation. A process gas mixture including silicon is introduced into the chamber. The surface of the wafer is seeded with silicon nuclei, and the wafer is annealed to convert the silicon to HSG.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.