Dual-metal-trench silicon carbide Schottky pinch rectifier
US6362495B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1999 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Mar 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1226
Abstract
A dual-metal-trench silicon carbide Schottky pinch rectifier having a plurality of trenches formed in an n-type SiC substrate, with a Schottky contact having a relatively low barrier height on a mesa defined between adjacent ones of the trenches, and a Schottky contact having a relatively high barrier height at the bottom of each trench. The same metal used for the Schottky contact in each trench is deposited over the Schottky contact on the mesa. A simplified fabrication process is disclosed in which the high barrier height metal is deposited over the low barrier height metal and then used as an etch mask for reactive ion etching of the trenches to produce a self-aligned low barrier contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.