Semiconductor device
US6362514B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1999 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Jul 13, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is described a semiconductor device having a copper fuse which prevents damage to a silicon substrate beneath the copper fuse, which would otherwise be caused by a laser beam radiated to blow the copper fuse. A light absorbing layer is formed on the copper fuse layer from material whose light absorption coefficient is greater than that of a copper wiring layer. Light absorbed by the light absorbing layer is transmitted, through heat conduction, to the copper wiring layer beneath the light absorbing layer and further to a barrier metal layer beneath the copper wiring layer. Even when the widely-used conventional laser beam of infrared wavelength is used, the copper fuse can be blown. Since a guard layer is formed below the fuse layer, there can be prevented damage to the silicon substrate, which would otherwise be caused by exposure to the laser beam of visible wavelength. Therefore, the copper fuse can be blown even by use of a laser beam of visible wavelength whose light absorption coefficient for copper is high.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.