Nonvolatile semiconductor memory device
US6363010B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2001 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Jul 6, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A bit line controller is provided for connecting a data input/output line and one bit line BL to each other. The bit line controller has a data latch for latching multilevel write data supplied from the data input/output line to the memory cell and a sense amplifier for sensing and latching data output to one bit line BL from the memory cell transistor. When the number of multilevel data to be output to one bit line BL is 2m (m is a natural number not smaller than 2)=n-level, the number of each of the data latch and sense amplifier is “m”. Specifically, when the number is determined such that 22=4, the number of each of the data latch and the sense amplifier is two. As a result, there is provided a nonvolatile semiconductor memory device capable of decreasing the size of a column-system circuit and realizing a highly integrated structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.