Patent · US Expired

Method for fabricating a field emission device and method for the operation thereof

US6364730B1 · kind B1 · utility

4Cited by
10References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 18, 2000
Grant dateApr 2, 2002
Priority date
Expiry dateJan 18, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2209/0226
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method for operating a field emission device (100) having an electron emitter (115) includes the steps of providing an emitter-enhancing electrode (117) proximate to electron emitter (115), causing emitter-enhancing electrode (117) to emit electrons, and causing the electrons emitted by emitter-enhancing electrode (117) to be received by electron emitter (115). A method for fabricating a field emission device (100) includes the steps of forming a layer (126) of dielectric material, forming emitter-enhancing electrode (117) on layer (126) of dielectric material, forming an enhanced-emission structure (131) in emitter-enhancing electrode (117), removing a portion of layer (126) of dielectric material proximate to enhanced-emission structure (131) to form a well (114, 158), and forming electron emitter (115) within well (114, 158).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.