Method for producing a suspended element in a micro-machined structure
US6365056B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1999 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jul 27, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A process for making at least one suspended element uses an etching technique for micro-machining a structure comprising a substrate covered in sequence by a first layer called a stop layer made of a first material, and a second layer made of a second material in which the suspended element is formed. The process uses a dry etching technique using a gas with sufficient selectivity to enable etching of the second layer without etching the stop layer, under conditions defined to enable anisotropic etching of the second material, the etching being carried out according to a first phase to delimit the suspended element as far as the level of the stop layer and being continued in a second phase during which the suspended element is released by etching of the surface layer of the suspended element delimited in the first phase and which is adjacent to the stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.