Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
US6365225B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Aug 17, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/24
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus, and product by process, for the production of bulk polysilicon by a chemical vapor deposition process on a removable tube section. A quartz envelope and base plate form a CVD reactor enclosure, with external radiant heaters providing process heat through the wall of the reactor, and with process gas inlet and outlet ports located in the base plate. A tube section, preferably an EFG silicon tube-section, vertically emplaced on the base plate and capped to close the top is used as the reaction chamber. During the CVD process, deposition occurs on the inside surface of the chamber tube, the inner diameter of the deposit layer becoming increasingly smaller as the yield accumulates. In a two tube reactor, a smaller diameter, vertical middle tube is uniformly spaced and supported inside the chamber tube for fall flow of process gas over and under the middle tube so that deposition occurs on the three exposed tube surfaces. A co-axial core tube and heater mounted on the base plate provides yet more deposition surface area, improved thermal gradient in the reaction chamber, and greater thermal efficiency to the process. The full, double sided deposit on the middle t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.