Method of forming dielectric film with good crystallinity and low leak
US6365420B2 · kind B2 · utility
9Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2001 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Mar 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric film forming method includes forming on a surface of underlie substance a film of an oxide dielectric material including lead or bismuth, treating a surface of the oxide dielectric film with solution of nitric acid, and crystallizing the oxide dielectric film by annealing the film to obtain an oxide dielectric film. This provides a method of forming a dielectric film with good dielectric characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.