Patent · US Expired

Method of manufacturing a photovoltaic device

US6365431B1 · kind B1 · utility

0Cited by
1References
28Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 28, 2000
Grant dateApr 2, 2002
Priority date
Expiry dateNov 28, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F77/334

Abstract

This invention manufactures a photovoltaic device by the following process steps: a step to form a first electrode layer and a light-active semiconductor layer on an insulating surface of the substrate; a step to form a transparent conducting film over most of the insulating surface including the light-active semiconductor layer; a step to establish a patterned transparent protective layer on the transparent conducting film over power generating regions; and a step to irradiate ultraviolet laser light over most of the substrate to remove exposed portions of the transparent conducting film not masked by the pattered transparent protective layer and form a transparent conducting layer corresponding to the pattered transparent protective layer. The patterned transparent protective layer serves a dual purpose as masking material for removing the specified areas of the transparent conducting film by ultraviolet laser and as a transparent protective layer. Accordingly, material that is passed by visible light but not passed by ultraviolet light is used as the patterned transparent protective layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.