IC resistor and capacitor fabrication method
US6365480B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2001 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Apr 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
Abstract
An IC resistor and capacitor fabrication method comprises depositing a dielectric layer over existing active devices and metal interconnections on an IC substrate. In a preferred embodiment, a layer of thin film material suitable for the formation of thin film resistors is deposited next, followed by a metal layer that will form the bottom plates of metal-dielectric-metal capacitors. Next, the capacitors' dielectric layer is deposited to a desired thickness to target a particular capacitance value, followed by the deposition of another metal layer that will form the capacitors' top plates. The metal layers, the capacitor dielectric layer, and the thin film material layer are patterned and etched to form TFRs and metal-dielectric-metal capacitors as desired on the IC substrate. The method may be practiced using any of several alternative process sequences. For example, the bodies of the TFRs can be formed before the deposition of the capacitors' layers. Also, the capacitors' bottom plates may be patterned and etched prior to doing the same for their top plates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.