Method for forming a uniform network of semiconductor islands on an insulating substrate
US6365491B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jun 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a network of islands (124) of semiconductor material on an electrically insulating material (112), comprising: p1 a) the deposition of nucleation kernels (122) on the surface of the electrically insulating material,b) the formation of islands of semiconductor material (124) respectively on the nucleation kernels.In accordance with the invention, the deposition of the nucleation kernels is effected using at least one so-called distribution layer (116) made of a material having a substantially regular molecular structure, formed on the surface of the electrically insulating material (112), in order to distribute the nucleation kernels in a substantially regular fashion on the surface of the electrically insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.