Method for antimony and boron doping of spherical semiconductors
US6365493B1 · kind B1 · utility
2Cited by
11References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jan 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to diffuse the dopant to the semiconductor spheres.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.