Method of making a semiconductor device including testing before thinning the semiconductor substrate
US6365513B1 · kind B1 · utility
17Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1998 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Sep 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A via hole having a bottom is formed in a substrate and then a conductor layer is formed at least over a sidewall of the via hole. Thereafter, the substrate is thinned by removing a portion of the substrate opposite to another portion of the substrate in which the via hole is formed such that the conductor layer is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.