Small particle size chemical mechanical polishing composition
US6365520B1 · kind B1 · utility
8Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jul 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a chemical mechanical polishing slurry for the planarization of shallow trench isolation structures and other integrated circuit structures. The chemical mechanical polishing slurry of this invention comprises small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. In use, the chemical mechanical polishing slurry of this invention can also include viscosity additives and etchants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.