Semiconductor device and method for fabricating the same
US6365959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2001 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Apr 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of lower-level metal interconnects are formed over a semiconductor substrate. A first fluorine-containing insulating film, made of a fluorine-doped insulator, is formed to fill in gaps between adjacent ones of the lower-level metal interconnects over the semiconductor substrate. An interlevel insulating film is formed over the lower-level metal interconnects and the first fluorine-containing insulating film. And a plurality of upper-level metal interconnects are formed on the interlevel insulating film. The interlevel insulating film includes: a second fluorine-containing insulating film made of a fluorine-doped insulator; and a silicon-rich insulating film containing a larger quantity of silicon than a quantity defined by stoichiometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.