Patent · US Expired

High power single mode semiconductor lasers and optical amplifiers using 2D Bragg gratings

US6366598B1 · kind B1 · utility

9Cited by
8References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 10, 1999
Grant dateApr 2, 2002
Priority date
Expiry dateFeb 10, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/1078
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A waveguide (10) is provided having a two-dimensional optical wavelength Bragg grating (20) embedded within a semiconductor laser medium (16). More particularly, the waveguide (10) includes an active region (16) sandwiched between n-doped and p-doped cladding layers (14, 22). The two-dimensional Bragg grating (20) is formed in the active region (16). Upper and lower electrodes (24, 26) are defined on opposite sides of the cladding layers (14, 22) to complete the waveguide structure (10). The two-dimensional grating (20) provides simultaneous frequency selective feedback for mode control in both the longitudinal and lateral directions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.