Patent · US Expired

Method and apparatus for measuring surface shape of thin element

US6367159B1 · kind B1 · utility

11Cited by
18References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 30, 1999
Grant dateApr 9, 2002
Priority date
Expiry dateMar 30, 2019

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01B21/08
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Method for measuring the surface shape of a thin element such as a silicon wafer measures the surface shapes of one surface and the other surface of the thin element by independently measuring the distance each to one surface and to the other surface of the thin element by rotating or moving the thin element within a single plane and independently moving the first and second measuring means along the first and second guide shafts. Apparatus for measuring the surface shape of the thin element measures the surface shapes of one surface and the other surface of the thin element by rotating or moving the thin element supported within the same plane by a supporting means, and independently measuring the distance each to one surface and to the other surface of the thin element by the first and second measuring means while independently moving the first and second sliders along the first and second guide shafts. The method measures the thickness of each part of the thin element based on the surface shapes of one surface and the other surface of the thin element as measured by the method for measuring the surface shape of the thin element and the distance between the first and second measu…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.