Plasma CVD apparatus
US6367411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1999 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Dec 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3277
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A continuous plasma CVD apparatus, characterized in that frequency of high-frequency bias is in the range of 50-900 KHz, a blocking condenser is provided between a thin film and a high-frequency source so that the product C·f of electrostatic capacity C of the blocking condenser and frequency f of the high-frequency source is 0.02 [F·Hz] or more, and the total of impedances of all the rollers provided in the route of from a substrate unwind roller to a rotating drum is 10 k&OHgr; or more and the total of impedances of all the rollers provided in the route of from the rotating drum to a wind roller is 10 k&OHgr; or more. According to this apparatus, it becomes possible to continuously form a film without causing damage and deterioration of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.