Apparatus and process for controlled atmosphere chemical vapor deposition
US6368665B1 · kind B1 · utility
12Cited by
10References
66Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1998 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Apr 29, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved chemical vapor deposition apparatus and procedure is disclosed. The technique provides improved shielding of the reaction and deposition zones involved in providing CVD coatings, whereby coatings can be produced, at atmospheric pressure, of materials which are sensitive to components in the atmosphere on substrates which are sensitive to high temperatures and which are too large, or inconvenient, to process in vacuum or similar chambers. The improved technique can be used with various energy sources and is particularly compatible with Combustion Chemical Vapor Deposition (CCVD) techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.