Metal-insulator-metal diodes and methods of manufacture
US6368705B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1999 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Apr 16, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31681
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A metal insulator diode device and method of manufacture are described. The device includes a conductive layer and a metal-insulator layer comprising particles of a refractory metal having an intrinsic oxide coating that are suspended in a dielectric binder. The device also includes a second conductive layer disposed to be in direct contact with the insulator metal layer. The conductive layers can include a metal and a dielectric filler material. In one embodiment, the metal-insulator layer comprising particles of a refractory metal such as tantalum. The metal-insulator layer can also be comprised of particles of a dielectric such as titanium dioxide to increase solids content of the metal-insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.