ELO semiconductor substrate
US6368733B1 · kind B1 · utility
63Cited by
7References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 5, 1999 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Aug 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate comprising a single crystal substrate having thereon a mask and a Group III-V compound semiconductor epitaxially grown layer, said mask comprising an insulating material thin film or high melting point metal thin film having a plurality of slit-like exposed areas running at an angle in excess of 0°, and said Group III-V compound semiconductor epitaxially grown layer being formed by growing a Group III-V compound semiconductor starting from each of said plurality of exposed areas and conjunction-integrating the grown semiconductors on said mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.