Method of manufacturing a semiconductor device and a semiconductor device
US6368913B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 23, 1999 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Dec 23, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method of manufacturing a semiconductor device such as a DRAM device having a capacitor. The capacitor has an electrode having an HSG structure. The electrode is formed by: forming a cylinder type electrode body which is made of amorphous silicon and which has at least an inner wall surface and an outer wall surface, the forming a cylinder type electrode body comprises at least forming an amorphous silicon film by using a thermal CVD method; and by forming hemispherical grain (HSG) at least at the inner wall surface and at the outer wall surface of the cylinder type electrode body to form a hemispherically grained cylinder type electrode. When the amorphous silicon film is formed by using a thermal CVD method, at least an initial growth temperature of the amorphous silicon film is controlled to be within a range from 450 to 520 degrees Celsius.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.