Amorphous carbon layer for improved adhesion of photoresist and method of fabrication
US6368924B1 · kind B1 · utility
27Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2000 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Oct 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.