Semiconductor device for controlling high-power electricity with improved heat dissipation
US6369411B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 2001 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Jan 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including (a) a base plate, (b) an insulation substrate including of an insulator plate with a front electrode and a back electrode bonded thereon and fixed onto the base plate by the back electrode, (c) a semiconductor element fastened onto the insulation substrate by the front electrode, (d) an insulating cover covering the semiconductor element, and (e) electrodes that are led from the semiconductor element to the outside of the insulating cover. The back electrode is larger than the insulator plate, and the base plate has a through hole that is smaller than the back electrode and larger than the insulator plate. The insulation substrate is positioned in the through hole and is fastened onto the back surface of the base plate by the periphery of the back electrode. The insulation substrate can make direct contact with a heat sink without the base plate intervening therebetween, and thereby thermal resistance between the semiconductor element and the heat sink is decreased. Also, bending stress to be generated in the insulator plate when fastening the heat sink onto the base plate by screwing is mitigated by the back electrode, and thereby dielectric breakd…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.