Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications
US6369853B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1997 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Nov 13, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over portions of the semiconductor substrate comprising a circuit node including the second terminal of the semiconductor transfer switch, the second terminal of the capacitive storage element and the input of the semiconductor amplifier and to prevent substantially all photons from entering the circui…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.