Intracavity frequency-converted optically-pumped semiconductor laser
US6370168B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 20, 1999 |
| Grant date | Apr 9, 2002 |
| Priority date | — |
| Expiry date | Oct 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/183
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An intracavity, frequency-doubled, external-cavity, optically-pumped semiconductor laser in accordance with the present invention includes a semiconductor multilayer surface-emitting gain-structure surmounting a Bragg mirror. An external concave mirror and the Bragg-mirror define a stable laser-resonator including the gain-structure. A birefringent filter is located in the resonator, inclined at an angle to the resonator axis, for selecting a fundamental frequency of the laser-radiation within a gain bandwidth characteristic of semiconductor structure. An optically-nonlinear crystal is located in the laser-resonator between the birefringent filter and the gain-structure and arranged to double the selected frequency of laser-radiation. The gain-structure is coated with a dichroic coating which reflects the frequency-doubled radiation and transmits the fundamental radiation and optical pump-light. A surface of the birefringent filter facing the gain-structure includes a dichroic coating which reflects the frequency-doubled radiation and transmits the fundamental radiation. Frequency-doubled radiation generated on both forward and reverse passes of fundamental laser-radiation through …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.