Compliant substrates for growing lattice mismatched films
US6372356B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Apr 28, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compliant substrates include a compliant single crystal layer formed on an amorphous buffer layer, which is formed on a single crystal base layer. The compliant single crystal layer can be used as a template to support the growth of one or more lattice mismatched layers on the compliant substrate. Various electronic and optoelectronic devices including, for example, photodetectors, long-wavelength semiconductor light-emitting devices, short-wavelength semiconductor light-emitting devices, optical modulators and transistors, can be formed on the compliant substrates. The compliant substrates can be produced by epitaxially forming an intermediate single crystal layer, that can be treated to convert it to an amorphous layer, between two single crystal layers, and treating the intermediate single crystal layer to form an amorphous buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.