II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction

US6372536B1 · kind B1 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Frank Fischer · Mesa, US
• Andreas Waag · Würzburg, DE
• Thierry Baron · Pessac, FR
• Gottfried Landwehr · Würzburg, DE
• Thomas Litz · Würzburg, DE
• Günter Reuscher · Würzburg, DE
• Markus Keim · Ansbach, DE
• Ulrich Zehnder · Regensburg, DE
• Hans-Peter Steinbrück · Erlangen, DE
• Mario Nagelstrasser · Würzburg, DE
• Hans-Jürgen Lugauer · Sinzing, DE

Key dates

• Filing date: Jan 10, 2000
• Grant date: Apr 16, 2002
• Expiry date: Jan 10, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/823

Abstract

The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be—Se configuration.