Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate
US6372558B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Aug 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an active matrix substrate having a built-in high-performance driver, in which a single crystal silicon thin film having high electron/hole mobility is uniformly deposited at a relatively low temperature, and an electrooptic device such as a thin film semiconductor device for display including the active matrix substrate. The single crystal silicon thin film is deposited by hetero epitaxial growth by a catalytic CVD method or the like using a crystalline sapphire thin film formed on the substrate as a seed so that the single crystal silicon layer obtained is used for top gate type MOSTFTs of the electrooptic device such as a LED or the like in which a display region and a peripheral driving circuit region are integrated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.