Process for making semiconductor device with epitaxially grown source and drain
US6372583B1 · kind B1 · utility
520Cited by
2References
13Claims
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Key dates
| Filing date | Feb 9, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Feb 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
A method for making a semiconductor device. In that method, source and drain regions are epitaxially grown on a first part of a substrate. After a gate oxide is formed on a second part of the substrate, an etched polysilicon layer is formed on the gate oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.