Semiconductor device method
US6372585B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Sep 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention is to a method for producing a uniform nitrogen doped layer in silicon that effectively reduces boron transient enhanced diffusion (TED) for ultra shallow junction formation. A silicon substrate (10) from an n-type single crystal silicon grown in the [100] direction and cut into wafers with (100) faces exposed is pre-amorphized by silicon and germanium implantation (11). Nitrogen is implanted to a depth of 0.7 &mgr;m through the amorphous layer with multiple implantations at energies ranging from 10 keV to 250 keV (12). Boron is implanted into the pre-amorphized and nitrogen contained silicon substrate (13). After boron implantation, the substrate is subjected to a rapid thermal anneal process to remove lattice damage and activate boron. The resulting nitrogen and boron profiles (14) in the substrate of this invention exhibit suppressed boron TED and enable formation of p+ ultra shallow junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.