Patent · US Expired

Thyristor with breakdown region

US6373079B1 · kind B1 · utility

6Cited by

4References

11Claims

0Family size

Assignee

EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbH · DE

Inventors

Martin Ruff · Vaterstetten, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Mar 30, 1999
Grant date	Apr 16, 2002
Priority date	—
Expiry date	Mar 30, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/53
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The thyristor is based on a semiconductor body with an anode-side base zone of the first conductivity type and one or more cathode-side base zones of the opposite, second conductivity type. Anode-side and cathode-side emitter zones are provided, and at least one region in the cathode-side base zone whose geometry gives it a reduced breakdown voltage as compared with the remaining regions in the cathode-side base zone and the edge of the semiconductor body. At the anode, below the region of reduced breakdown voltage, the thyristor has at least one recombination zone in which the free charge carriers have a reduced lifetime.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.