Compound semiconductor field effect transistor
US6373082B1 · kind B1 · utility
53Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1998 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Dec 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13064
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor field effect transistor having, between a gate electrode and a drain electrode, a non-gate region which is the channel region not covered by the gate electrode, wherein a plurality of isolation regions are formed in the non-gate region in such a way that they extend in the direction of channel current and contact with the gate electrode. This compound semiconductor field effect transistor is improved in breakdown voltage between drain and gate and yet retains the high-speed operability of transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.