Method of manufacturing a surrounding gate type MOFSET
US6373099B1 · kind B1 · utility
42Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Feb 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.