Semiconductor integrated circuit device with threshold control
US6373323B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 9, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Nov 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/205
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The disclosed semiconductor integrated circuit device can control the threshold thereof without adding any other supply voltages except a drive supply voltage and a ground supply voltage. The semiconductor integrated circuit device comprises: a substrate potential generating circuit operative on the basis of a control signal, for deepening a substrate bias by pumping out charges from a semiconductor substrate when activated, but for setting an output thereof to a high impedance when deactivated; and a switch circuit operative on the basis of the control signal and turned on when the substrate potential generating circuit is deactivated, to set potential of the semiconductor substrate to a supply potential, but turned off when the substrate potential generating circuit is activated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.