Sub-nanosecond passively q-switched microchip laser system
US6373864B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2000 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Jan 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/2333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A sub-nanosecond passively Q-switched microchip laser is disclosed. It combines an optically pumped, passively Q-switched, high-frequency, microchip laser producing short pulses with an optically end-pumped amplifier producing high small-signal gain while pumped at low power. The microchip laser for emitting pulsed laser radiation is a monolithic body comprising two reflective elements defining an optical resonator for laser radiation, a laser gain medium, e.g., Nd:YAG, and a saturable absorber medium, e.g., Cr4+:YAG placed inside said resonator. The optical amplifier stage for amplifying the laser radiation comprises an amplifying medium, e.g., Nd:YVO4. The microchip laser and the amplifier are optically end-pumped, preferably by high-brightness diodes. This entirely passive laser system directly produces &mgr;J pulses at repetition rates of about 45 kHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.