Semiconductor laser structure with an increased catastrophic optical damage level
US6373875B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1999 |
| Grant date | Apr 16, 2002 |
| Priority date | — |
| Expiry date | Aug 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2205
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser structure is provided, which has an increased catastrophic optical damage (COD) level that allows the laser diode to have an increased life time of use. This semiconductor laser structure is characterized in the forming of a current-blocking structure proximate to the facets of the laser diode, which can help reduce the injected current into the facets, thereby increasing the COD level of the resulted laser diode. As a result, the resulted laser diode can operate at a high output power and nonetheless have an increased life time of use. Moreover, the forming of the current-blocking layers proximate to the facets can be performed simply by incorporating an additional photomask step in the fabrication without having equipment such as epitaxial equipment or vacuum equipment in the case of the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.