InA1As etch stop layer for precise semiconductor waveguide fabrication
US6376272B1 · kind B1 · utility
6Cited by
1References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Jun 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/209
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH4/H2 etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.