Method of making a pn-junction in a semiconductor element
US6376321B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Oct 17, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pn-junction in a semiconductor element is made in that, within a zone of a first conductivity type, by means of implantation, a first and second zone of a second conductivity type are formed which are initially separated from each other, with subsequent diffusion processes, as a result of lateral diffusion, the first and second zones combine into a connected well, by means of implantation, a further zone of the first conductivity type is formed which completely overlaps the first zone of the second conductivity type and which is larger than the first zone, and which does not touch the second zone of the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.