Pulsed or tailored bias for filling gaps with low dielectric constant material
US6376391B1 · kind B1 · utility
12Cited by
5References
29Claims
0Family size
Inventors
Key dates
| Filing date | Dec 30, 1999 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Dec 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A variable high frequency rf bias is applied to a substrate during a high density plasma CVD process for filling gaps in integrated circuits with low dielectric material. The rf bias is varied by applying it as a pulse or by tailoring the magnitude of the rf bias. Preferably, a gasified organic precursor compound comprising silicon, oxygen and carbon atoms is flowed into the plasma CVD reaction chamber. Preferably, no reactive oxygen gas is used in the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.