MOS-gated devices with alternating zones of conductivity
US6376878B1 · kind B1 · utility
123Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Feb 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
This disclosure describes variety of MOS gated devices constructed with alternating conductivity type lower zones. These zones are used for depleting charge when blocking voltage is applied. When alternating zones are incorporated in the devices they allow use of a much higher conductivity material for drain construction, which in turn reduces device on-resistance and improves their efficiency. The method of creation of these new innovative structures with very small sizes (cell pitches) is also proposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.