Single crystal SiC
US6376900B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Feb 4, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In single crystal SiC 1, growing single crystal SiC 3 is integrally formed on a surface of a single crystal hexagonal (6H type) &agr;-SiC substrate 2 used as a seed crystal. The number of micropipes 4A of the growing single crystal SiC 3 is less than that of the micropipes 4B of the single crystal &agr;-SiC substrate 2, and the thickness t3 thereof is less than the thickness t2 of the single crystal &agr;-SiC substrate 2, thereby making it possible to obtain the high quality-single crystal SiC wherein the number of the micropipes per unit area is less, thereby decreasing the distortion in the neighborhood of the micropipes. This can provide the high-quality single crystal SiC which can be practically used as a substrate wafer for fabricating a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.