Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices
US6377596B1 · kind B1 · utility
41Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1998 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Mar 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insulating member (4) and the substrate (40) exposed by the opening thereby to form a semiconductor material (1, 5, 51, 52). A semiconductor material (6, 7) configured of the first semiconductor material or configured of the first semiconductor material and another semiconductor material grown on the first semiconductor material is processed thereby to form a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.