Semiconductor light-emitting device and method for producing the same
US6377598B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2000 |
| Grant date | Apr 23, 2002 |
| Priority date | — |
| Expiry date | Nov 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.